赤外線加熱単結晶育成システム（IRF)
棒状に焼き固めた粉末試料を、2つのハロゲンランプと双楕円鏡で集光加熱して試料を溶解し、高純度の単結晶を育成する装置です。
物性測定
表面解析
バイオ＆ライフサイエンス
光学クライオスタット/低温物性
リソグラフィー/単結晶製造
産業分野
Quantum Design is proud to introduce a laser-based floating zone (L-FZ) furnace. This novel system, based on technology developed by the RIKEN CEMS (Center for Emergent Matter Science) institute in Japan, promises the opportunity to grow materials unable to be grown by more traditional floating zone methods.
Quantum Design Japan is proud to introduce a laser-based floating zone (LFZ) furnace with 1K to 2KW power laser. This novel system promises the opportunity to grow materials unable to be grown by more traditional floating zone methods and realizes higher single crystal quality of higher-melting-point materials. Five laser heads have high uniformity of irradiation intensity (95% or more) and the adoption of laser profile developed by RIKEN institute in Japan enables the relaxation of thermal stress on crystals to prevent the occurrence of cracks in crystals.
In addition, because the irradiation spot by laser is small, there is little adhesion on to the inner surface of the quartz tube, making it possible to grow single crystals continuously even with high evaporation materials.
The temperature of the melting zone can be directly monitored during crystallization process up to a high temperature range of 3000°C using a patented technology of radiation thermometer.
A more gradual irradiation intensity distribution is adopted in the direction of crystal growth to help minimize thermal stresses within the material.
This optimization of the laser beam profile reduces thermal stresses on crystals as compared against a conventional laser FZ furnace consisting of a traditional top-hat laser power profile.
The irradiation intensity distribution of 5 laser head is circumferentially uniform.
A circumferential homogeneity of over 95% of irradiation intensity on the outer surface of the raw material is achieved (excellent circumferential uniformity as compared to a lamp-FZ platform).
Temperature of molten zone can be directly monitored and recorded throughout the crystal growth process is possible with temperature range from 800 up to 3000 ℃ via a customized radiation thermometer.
Temperature monitoring spatial resolution of better than φ1.5mm.
The temperature of the melting zone can be controlled to the target temperature on the phase diagram with minimal temperature overshooting over a narrow 1℃ temperature window, ensuring growth of the desired compound.
Ideal for crystal production by the TSFZ method requiring long-term, unattended temperature control over a narrow 1℃ temperature window.
Reproducibility of measured temperature is within +/-1℃ .
Compared to a traditional Halogen or Xenon lamp, the laser generates a much more concentrated energy profile at the FZ region. Less of the feed material is exposed to the higher temperatures generated by the energy source, lessening the amount of evaporative material which can contaminate the quartz tube.
The focused laser power acts to ablate any evaporates that may contaminate the quartz tube, leaving the quartz tube relatively clean in the laser-beam pass region.
Optional thin-wall protective quartz sleeves are available to help further protect the inside diameter of the quartz tube from damage or contamination.
Able to observe and control melting image and melting temperature with PCs and smartphones from the laboratory desk, home, or anywhere outside.
Direct observation of melting zone temperature and zone image dramatically improves stable melting zone maintenance control
Ruby（Tm ～ 2072C）
Ruby with such a clean crystal surface can not be grown in a Ha-FZ furnace.
SmB6（Tm ＝ 2345C）※A topological insulator
Materials with refractory and high conductivity properties can not be grown in a Ha-FZ furnac
Y-type Ferrite; Ba2Co2Fe12O22 (Tm 1440 C)
(room temperature multi-ferroic materials)
Single crystals of materials with incongruent properties at melting temp; due to a narrow melting temperature range (10C), this material can not be easily grown by Ha-FZ method.
| Heating control | Laser head | 5 laser head |
| Laser power for FZ | 2kW（400W×5）、 1kW（200W ×5） | |
| FZ temperature range | 500 ℃～3000 ℃（material dependent ） | |
| FZ temperature monitering | 500 ℃～3000 ℃（radiation thermometer） | |
| Temperature reproducibility | ±1 ℃（over entire temperature range） | |
| Crystal growth control | Crystal growth max. length | 150 mm |
| Crystal max. diameter | 8 mm | |
| Growth speed / rotation speed | 0.1～200 mm（mm/hr）、0.1～40 rpm | |
| FZ region vacuum / pressure | 1×10-4 torr ～ 10 bar | |
| FZ environment | User-supplied external gas | |
| Growth monitoring | High vision Full HDTV camera | |
| Growth control | Ubiquitous control possible by PC/Smartphone from your desk/home for remote monitoring | |
| Others | Instrument footprint | W250x D200 x H220 (cm) |
詳細はお問い合わせください。
Laser-based Floating Zone Furnace
現在カタログはありません。
棒状に焼き固めた粉末試料を、2つのハロゲンランプと双楕円鏡で集光加熱して試料を溶解し、高純度の単結晶を育成する装置です。
棒状に焼き固めた粉末試料を、2つのハロゲンランプと双楕円鏡で集光加熱して試料を溶解し、高純度の単結晶を育成する装置です。
棒状に焼き固めた粉末試料を、2つのハロゲンランプと双楕円鏡で集光加熱して試料を溶解し、高純度の単結晶を育成する装置です。
高出力レーザ（1.5kW、2kW）を用いた浮遊溶融帯方式による低融点から高融点材料の高品質単結晶を育成するシステムです。
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